STB21NM60N STMicroelectronics, STB21NM60N Datasheet - Page 4

• Manufacturer Part Number: STB21NM60N
• Description: MOSFET N-CH 600V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 50V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5002-2

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off on inductive load
Table 6.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
t
t
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
d(on)
d(off)
Q
Q
DSS
GSS
fs
Q
R
oss
t
oss eq
t
rss
iss
gs
gd
r
f
g
g
(1)
(1)
=25°C unless otherwise specified)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
= 0)
DSS
GS
= 0)
V
V
V
V
V
R
(see Figure 23),
(see Figure 18)
V
V
(see Figure 19)
f=1 MHz Gate DC Bias = 0
test signal level = 20 mV
open drain
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
DD
GS
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω V
= 480 V, I
= 10 V
= 15 V
= 50 V, f = 1 MHz,
= 0
= 0, V
= 300 V, I
= 480 V, I
= 10 V,
= Max rating
= Max rating @125 °C
= ± 20 V
= V
= 10 V, I
Test conditions
Test conditions
GS
DS
, I
,
I
GS
D
D
GS
D
D
= 0 to 480 V
D
D
= 250 µA
= 8.5 A
= 17 A,
= 8.5 A
= 0
= 8.5 A
= 10 V
= 17 A,
Min.
Min.
600
2
1900
Value
0.170
Typ.
110
282
Typ.
12
15
22
15
84
31
66
10
33
48
2
3
oss
Max.
0.220
Max.
when V
100
100
1
4
DS
Unit
Unit
V/ns
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
V
V
Ω