STP8NK100Z STMicroelectronics, STP8NK100Z Datasheet - Page 10

• Manufacturer Part Number: STP8NK100Z
• Description: MOSFET N-CH 1000V 6.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP8NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 102nC @ 10V
• Input Capacitance (ciss) @ Vds: 2180pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5021-5

4 Package mechanical data
10/13
DIM.
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
Ø
A
B
D
E
H
F
0.45
0.75
1.15
1.15
4.95
28.6
15.9
MIN.
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
TO-220FP MECHANICAL DATA
mm.
TYP
16
MAX.
2.75
10.4
30.6
10.6
16.4
4.6
2.7
0.7
1.7
1.7
5.2
2.7
3.6
9.3
3.2
1
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
MIN.
STF8NK100Z - STP8NK100Z
0.630
TYP.
inch
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
MAX.