STP8NK100Z STMicroelectronics, STP8NK100Z Datasheet - Page 5
![MOSFET N-CH 1000V 6.5A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP8NK100Z
Manufacturer Part Number
STP8NK100Z
Description
MOSFET N-CH 1000V 6.5A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP8NK100Z.pdf
(13 pages)
Specifications of STP8NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.85 Ohm @ 3.15A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
102nC @ 10V
Input Capacitance (ciss) @ Vds
2180pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohms
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.5 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5021-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP8NK100Z
Manufacturer:
ST
Quantity:
30 000
Company:
Part Number:
STP8NK100Z
Manufacturer:
STMicroelectronics
Quantity:
1 840
Part Number:
STP8NK100Z
Manufacturer:
ST
Quantity:
20 000
STF8NK100Z - STP8NK100Z
2.1
Figure 1.
Figure 3.
Figure 5.
Electrical characteristics (curves)
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
Output Characteristics
Figure 2.
Figure 4.
Figure 6.
Thermal Impedance for TO-220
Thermal Impedance for TO-220FP
Transfer Characteristics
2 Electrical characteristics
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