STP8NK100Z STMicroelectronics, STP8NK100Z Datasheet - Page 3

• Manufacturer Part Number: STP8NK100Z
• Description: MOSFET N-CH 1000V 6.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP8NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 102nC @ 10V
• Input Capacitance (ciss) @ Vds: 2180pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5021-5

STF8NK100Z - STP8NK100Z
2
Table 4.
Table 5.
g
V
Symbol
Symbol
R
fs
C
V
Note
(BR)DSS
I
I
DS(on)
C
oss eq.
GS(th)
C
C
Q
Q
DSS
GSS
Note
Q
oss
rss
iss
gd
gs
g
5
Electrical characteristics
(T
6
CASE
On/off states
Dynamic
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
Gate Body Leakage Current
(V
Gate Threshold Voltage
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DS
= 25 °C unless otherwise specified)
= 0)
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
(see Figure 17)
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
GS
= 1mA, V
= V
= 10 V, I
= Max Rating,
= Max Rating,Tc = 125°C
= ±20V
=0V, V
=800V, I
=15V, I
=25V, f=1 MHz, V
=10V
Test Conditions
Test Conditions
GS
, I
DS
GS
D
D
D
D
= 100 µA
= 3.15 A
=0 to 800V
= 0
=3.15 A
= 6.3A
GS
=0
1000
Min.
Min.
3
Typ.
2 Electrical characteristics
3.75
1.60
2180
Typ.
174
36
83
73
12
40
7
Max.
1.85
Max.
±
102
4.5
50
10
1
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
S
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