STV200N55F3 STMicroelectronics, STV200N55F3 Datasheet

MOSFET N-CH 55V 200A POWERSO-10

STV200N55F3

Manufacturer Part Number
STV200N55F3
Description
MOSFET N-CH 55V 200A POWERSO-10
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STV200N55F3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Configuration
Single Quad Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.8 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7028-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STV200N55F3
Manufacturer:
STMicroelectronics
Quantity:
2 488
Features
1. Current limited by package
Application
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of ST’s
STripFET™ process. The resulting transistor
shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
March 2009
STV200N55F3
Conduction losses reduced
Low profile, very low parasitic inductance
Switching applications
Type
STV200N55F3
Order code
Device summary
V
55 V
DSS
< 2.5 mΩ
R
DS(on)
max
N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10
200N55F3
Marking
200 A
I
D
(1)
Rev 3
Figure 1.
STripFET™ Power MOSFET
PowerSO-10
Package
Internal schematic diagram and
connection diagram (top view)
10
PowerSO-10
STV200N55F3
1
Tape and reel
Packaging
www.st.com
1/12
12

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STV200N55F3 Summary of contents

Page 1

... STV200N55F3 March 2009 N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET™ Power MOSFET R DS(on) ( max < 2.5 mΩ 200 A Figure 1. Marking 200N55F3 PowerSO-10 Rev 3 STV200N55F3 10 1 PowerSO-10 Internal schematic diagram and connection diagram (top view) Package Packaging Tape and reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STV200N55F3 ...

Page 3

... STV200N55F3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM (3) P Total dissipation at T TOT Derating factor (4) E Single pulse avalanche energy AS T Storage temperature stg T Operating junction temperature j 1 ...

Page 4

... Gate-drain charge gd 4/12 Test conditions I = 250 µ Max rating Max rating ± 250 µ Test conditions MHz 120 Figure 14 STV200N55F3 Min. Typ. Max 125 ° ±100 2 4 1.8 2.5 Min. Typ. Max. 6800 =0 1450 GS 15 100 30 26 Unit V µA µ mΩ Unit ...

Page 5

... STV200N55F3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SD (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... DS 10 Figure 5. AM03161v1 I D (A) 400 6V 350 300 250 200 150 100 ( temperature Figure 7. R DS(on) (Ω) 2.5 2.0 1.5 1.0 0.5 STV200N55F3 Thermal impedance 280tok δ=0.5 0.2 0.1 0.05 0.02 Zth=k Rthj-c δ=tp/τ 0.01 Single pulse tp τ Transfer characteristics V = ...

Page 7

... STV200N55F3 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform STV200N55F3 ...

Page 9

... STV200N55F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Package mechanical data ® 9/12 ...

Page 10

... Package mechanical data Dim < 10/12 PowerSO-10 mechanical data mm Min Typ 0.00 3.40 1.25 0.40 0.35 9.40 7.40 13.80 9.30 7.20 5.90 1.27 0. STV200N55F3 Max 3.70 0.10 3.60 1.35 0.53 0.55 9.60 7.60 14.40 9.50 7.60 6.10 1. 0068039_E ...

Page 11

... STV200N55F3 5 Revision history Table 8. Document revision history Date 05-Mar-2008 10-Nov-2008 02-Mar-2009 Revision 1 First release. 2 Document status promoted from preliminary to datasheet. Figure 2 3 has been updated. Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STV200N55F3 ...

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