STV200N55F3 STMicroelectronics, STV200N55F3 Datasheet - Page 4

• Manufacturer Part Number: STV200N55F3
• Description: MOSFET N-CH 55V 200A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV200N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7028-2

Electrical characteristics
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4/12
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
case
R
V
(BR)DSS
I
C
I
C
DS(on)
C
Q
Q
GS(th)
GSS
DSS
Q
oss
rss
iss
gs
gd
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
V
Figure 14
I
V
V
V
V
D
GS
DS
DD
DS
DS
DS
DS
GS
= 250 µA, V
= 10 V
= Max rating,
= Max rating, T
= ± 20 V
= V
= 25 V, f = 1 MHz, V
= 44 V, I
= 10 V, I
Test conditions
Test conditions
GS
, I
D
D
D
= 250 µA
GS
= 75 A
= 120 A,
= 0
c
= 125 °C
GS
=0
Min.
Min.
55
2
6800
1450
Typ.
Typ.
100
1.8
15
30
26
STV200N55F3
Max.
±100
Max.
2.5
10
1
4
Unit
Unit
mΩ
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V