STV200N55F3 STMicroelectronics, STV200N55F3 Datasheet - Page 6

• Manufacturer Part Number: STV200N55F3
• Description: MOSFET N-CH 55V 200A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV200N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7028-2

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
I
D
1
400
350
300
250
200
150
100
0.1
(A)
50
I
D
0
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
7V
2
Tc=25°C
Tj=175°C
Sinlge
pulse
1
V
GS
=10V
4
VDSS
10
6
vs temperature
6V
5V
V
DS
8
(V)
AM03160v1
V
AM03161v1
DS
100µs
10ms
1ms
(V)
Figure 3.
Figure 5.
Figure 7.
10
R
10
10
DS(on)
K
400
350
300
250
200
100
150
-2
-1
(A)
(Ω)
50
I
-5
D
2.5
0.5
2.0
1.5
1.0
0
0.1
δ=0.5
Single pulse
1
0
0.2
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
2
-4
0.01
V
100
V
3
DS
GS
=6V
10
=10V
4
-3
0.02
200
5
10
0.05
Zth=k Rthj-c
6
-2
300
δ=tp/τ
tp
7
τ
10
-1
STV200N55F3
8
400
280tok
t
9
p
I
(s)
D
V
(A)
AM00889v1
AM03163v1
GS
(V)