IXTQ200N075T IXYS, IXTQ200N075T Datasheet

MOSFET N-CH 75V 200A TO-3P

IXTQ200N075T

Manufacturer Part Number
IXTQ200N075T
Description
MOSFET N-CH 75V 200A TO-3P
Manufacturer
IXYS
Datasheet

Specifications of IXTQ200N075T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
430W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
200 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
50
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTQ200N075T
Manufacturer:
IXYS
Quantity:
156
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
M
D25
LRMS
DM
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
GS(th)
DSS
GSM
AS
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
GS
GS
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
= 250 μA
D
= 250 μA
= 25 A, Notes 1, 2
G
DS
= 5 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
IXTH200N075T
IXTQ200N075T
JM
Min.
2.0
75
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
4.0
± 20
200
540
750
430
300
260
175
5.5
75
75
75
25
± 200
3
6
250
Max.
4.0
5.0
5
V/ns
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
A
g
g
V
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
TO-247 (IXTH)
TO-3P (IXTQ)
Easy to mount
Space savings
High power density
V
I
R
G = Gate
S = Source
D25
G
DSS
DS(on)
D
G
S
D
S
=
= 200
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
5.0 mΩ Ω Ω Ω Ω
75
DS99634 (11/06)
(TAB)
(TAB)
A
V

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IXTQ200N075T Summary of contents

Page 1

... ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH200N075T IXTQ200N075T Maximum Ratings MΩ ± 20 200 75 540 JM 25 750 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min. Typ. ...

Page 2

... DSS D 43 0.25 0.21 Characteristic Values Min. Typ Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH200N075T IXTQ200N075T TO-247 AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5 ...

Page 3

... 1.2 1.4 1.6 1 100A Value 175º 25ºC J 200 250 300 350 IXTH200N075T IXTQ200N075T Fig. 2. Extended Output Characteristics @ 25ºC 350 V = 10V GS 9V 300 8V 7V 250 200 6V 150 100 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.6 V ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions -40ºC J 25ºC 150ºC 5 25º 1.1 1.2 1.3 1.4 1.00 C iss 0.10 C oss C rss 0. IXTQ200N075T Fig. 8. Transconductance 160 40ºC J 140 120 25ºC 100 80 150º 100 150 200 I - Amperes D Fig. 10. Gate Charge 38V ...

Page 5

... IXYS CORPORATION All rights reserved = 5 Ω 10V 38V 105 115 125 170 90 150 125º 130 75 70 110 25º IXTH200N075T IXTQ200N075T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 25º Ω 10V 38V 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Ω ...

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