IXTQ200N075T IXYS, IXTQ200N075T Datasheet - Page 2

• Manufacturer Part Number: IXTQ200N075T
• Description: MOSFET N-CH 75V 200A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ200N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 430W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 200 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0050
• Ciss, Typ, (pf): 6800
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 50
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
S
SM
d(on)
d(off)
f
Notes: 1.
r
rr
fs
J
iss
oss
rss
thJC
thCH
SD
g(on)
gs
gd
The product presented herein is under development.
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
location must be 5 mm or less from the package body.
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-3P
TO-247
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/μs
= 40 V, V
= 10 V; I
= 5 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V, V
= 0 V
= 10 V, V
GS
DS
D
GS
DS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
D
D
DS(on)
= 25 A
= 25 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
The Technical Specifications
Min.
Min.
5,237,481
5,381,025
5,486,715
70
Characteristic Values
Characteristic Values
6800
1040
Typ.
Typ.
0.25
0.21
110
190
160
31
57
54
52
35
43
50
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.35 °C/W
200
540
1.0
°C/W
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
ns
ns
ns
S
V
A
A
Pins: 1 - Gate
TO-247 AD Outline
TO-3P (IXTQ) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
3 - Source 4, TAB - Drain
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
4.32
1.65
2.87
5.20
3.55
5.89
6.15 BSC
IXTQ200N075T
Min.
6,727,585
6,759,692
6771478 B2
IXTH200N075T
Millimeter
4.7
2.2
2.2
1.0
1
3 - Source
.4
2 - Drain
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734 B2
7,063,975 B2
7,071,537
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216