STV250N55F3 STMicroelectronics, STV250N55F3 Datasheet

MOSFET N-CH 55V 250A POWERSO-10

STV250N55F3

Manufacturer Part Number
STV250N55F3
Description
MOSFET N-CH 55V 250A POWERSO-10
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STV250N55F3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
250A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Transistor Polarity
N Channel
Continuous Drain Current Id
250A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0015ohm
Rds(on) Test Voltage Vgs
10V
Configuration
Single
Resistance Drain-source Rds (on)
1.5 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
250 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7030-2

Available stocks

Company
Part Number
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Quantity
Price
Part Number:
STV250N55F3
Manufacturer:
ST
0
Features
Application
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
March 2009
STV250N55F3
Conduction losses reduced
Low profile, very low parasitic inductance
Switching applications
Type
STV250N55F3
Order code
Device summary
V
55 V
DSS
< 2.2 mΩ
R
max
DS(on)
N-channel 55 V, 1.5 mΩ, 250 A, PowerSO-10
250N55F3
Marking
250 A
I
D
Rev 4
Figure 1.
STripFET™ Power MOSFET
PowerSO-10
Package
Internal schematic diagram and
connection diagram (top view)
10
PowerSO-10
STV250N55F3
1
Tape and reel
Packaging
www.st.com
1/12
12

Related parts for STV250N55F3

STV250N55F3 Summary of contents

Page 1

... STV250N55F3 March 2009 N-channel 55 V, 1.5 mΩ, 250 A, PowerSO-10 STripFET™ Power MOSFET R DS(on max < 2.2 mΩ 250 A Figure 1. Marking 250N55F3 Rev 4 STV250N55F3 10 1 PowerSO-10 Internal schematic diagram and connection diagram (top view) Package Packaging PowerSO-10 Tape and reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STV250N55F3 ...

Page 3

... STV250N55F3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM (2) P Total dissipation at T TOT Derating factor (3) E Single pulse avalanche energy AS T Storage temperature stg T Operating junction temperature j 1 ...

Page 4

... Parameter Test conditions I = 250 µ Max rating Max rating ± 250 µ Parameter Test conditions MHz Figure 14 STV250N55F3 Min. Typ 125 ° 1.5 Min. Typ. 6800 = 0 1450 120 A, 100 30 26 Max. Unit V 1 µA 10 µA ±100 2.2 mΩ Max. Unit ...

Page 5

... STV250N55F3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SD (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... AM03164v1 K 100µs 1ms -1 10 10ms - ( Figure 5. AM03165v1 I (A) 400 6V 350 300 250 200 150 100 ( temperature Figure 7. R DS(on) (Ω) STV250N55F3 Thermal impedance δ=0.5 0.2 0.1 0.05 0.02 Zth=k Rthj-c δ=tp/τ 0.01 Single pulse tp τ Transfer characteristics ...

Page 7

... STV250N55F3 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform STV250N55F3 ...

Page 9

... STV250N55F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Package mechanical data ® 9/12 ...

Page 10

... Package mechanical data Dim < 10/12 PowerSO-10 mechanical data mm Min Typ 0.00 3.40 1.25 0.40 0.35 9.40 7.40 13.80 9.30 7.20 5.90 1.27 0. STV250N55F3 Max 3.70 0.10 3.60 1.35 0.53 0.55 9.60 7.60 14.40 9.50 7.60 6.10 1. 0068039_E ...

Page 11

... STV250N55F3 5 Revision history Table 8. Document revision history Date 25-Oct-2007 20-Mar-2008 10-Nov-2008 02-Mar-2009 Revision 1 Initial release 2 Content reworked to improve readability, no technical changes. 3 Document status promoted from preliminary data to datasheet. Figure 2 4 has been updated. Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STV250N55F3 ...

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