STV250N55F3 STMicroelectronics, STV250N55F3 Datasheet - Page 7

• Manufacturer Part Number: STV250N55F3
• Description: MOSFET N-CH 55V 250A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV250N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 250A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 250A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0015ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 250 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7030-2

STV250N55F3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
Figure 11. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
7/12