STV250N55F3 STMicroelectronics, STV250N55F3 Datasheet - Page 6

• Manufacturer Part Number: STV250N55F3
• Description: MOSFET N-CH 55V 250A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV250N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 250A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 250A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0015ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 250 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7030-2

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
I
D
1
350
300
200
150
100
400
250
0.1
(A)
50
I
D
0
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
Tj=175°C
Tc=25°C
Sinlge
pulse
7V
2
1
V
GS
=10V
VDSS
4
10
vs temperature
6
V
6V
DS
5V
(V)
AM03164v1
V
AM03165v1
DS
100µs
10ms
1ms
(V)
Figure 3.
Figure 5.
Figure 7.
10
R
10
10
DS(on)
K
400
350
300
250
200
150
100
-2
-1
(A)
(Ω)
50
I
-5
D
2.5
0.5
3.0
2.0
1.5
1.0
0
0.1
δ=0.5
0
Single pulse
0
0.2
Thermal impedance
Transfer characteristics
Static drain-source on resistance
1
10
V
DS
-4
0.01
=5V
2
100
V
GS
3
10
=10V
-3
0.02
4
200
5
10
0.05
Zth=k Rthj-c
-2
6
300
δ=tp/τ
tp
τ
7
10
-1
STV250N55F3
400
8
280tok
t
9
p
I
(s)
D
V
(A)
AM03166v1
AM03167v1
GS
(V)