STB20NM50-1 STMicroelectronics, STB20NM50-1 Datasheet - Page 7
![MOSFET N-CH 550V 20A I2PAK](/photos/1/39/13917/497-i2_pak__to-262_sml.jpg)
STB20NM50-1
Manufacturer Part Number
STB20NM50-1
Description
MOSFET N-CH 550V 20A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB20NM50-1.pdf
(14 pages)
Specifications of STB20NM50-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
1480pF @ 25V
Power - Max
192W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
192 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5382-5
STB20NM50-1
STB20NM50-1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB20NM50-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB20NM50-1
Manufacturer:
ST
Quantity:
20 000
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Figure 7.
Figure 9.
Figure 11. Normalized gate threshold voltage
Transconductance
Gate charge vs gate-source voltage Figure 10. Capacitance variations
vs temperature
Figure 8.
Figure 12. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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