STB20NM50-1 STMicroelectronics, STB20NM50-1 Datasheet - Page 9

• Manufacturer Part Number: STB20NM50-1
• Description: MOSFET N-CH 550V 20A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB20NM50-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 192W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 192 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5382-5; STB20NM50-1

STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
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Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 15. Gate charge test circuit
Figure 17. Unclamped Inductive load test
Figure 19. Switching time waveform
circuit
Test circuit
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