IXTA3N120 IXYS, IXTA3N120 Datasheet

MOSFET N-CH 1.2KV 3A TO-263

IXTA3N120

Manufacturer Part Number
IXTA3N120
Description
MOSFET N-CH 1.2KV 3A TO-263
Manufacturer
IXYS
Datasheet

Specifications of IXTA3N120

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 Ohms
Forward Transconductance Gfs (max / Min)
2.6 s
Drain-source Breakdown Voltage
1100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
3
Rds(on), Max, Tj=25°c, (?)
4.5
Ciss, Typ, (pf)
1050
Qg, Typ, (nc)
39
Trr, Typ, (ns)
700
Pd, (w)
200
Rthjc, Max, (k/w)
0.62
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q2023873

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTA3N120
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTA3N120
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2004 IXYS All rights reserved
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
V
Note 1
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
, I
D
D
DSS
DC
D
= 1 mA
= 250 µA
, V
G
= 0.5 I
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
,
JM
IXTA 3N120
IXTP 3N120
1200
min.
2.0
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1200
1200
200
150
300
±20
±30
700
12
20
4
2
3
3
5
±100
5.0
max.
4.5
25
1
V/ns
mJ
mJ
°C
°C
°C
°C
mA
W
nA
µA
V
V
V
V
A
A
A
g
g
V
V
TO-220 (IXTP)
TO-263 (IXTA)
G = Gate
S = Source
Features
Advantages
1200 V 3 A
International standard packages
Low R
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
V
DSS
DS (on)
G
D S
I
G
TAB = Drain
D25
D
S
= Drain
DS98844E(02/04)
4.5 Ω Ω Ω Ω Ω
R
DS(on)
D (TAB)
D (TAB)

Related parts for IXTA3N120

IXTA3N120 Summary of contents

Page 1

... ± GSS 0.8 V DSS DS DSS 0.5 I DS(on D25 Note 1 © 2004 IXYS All rights reserved IXTA 3N120 IXTP 3N120 Maximum Ratings 1200 = 1 MΩ 1200 GS ±20 ± 700 ≤ DSS 200 -55 to +150 150 -55 to +150 300 1.13/10 Nm/lb.in Characteristic Values (T = 25° ...

Page 2

... A/µ Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 3

... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg 2 0 Volts DS Fig Normalized to I DS(on) Value vs 2 Amperes D © 2004 IXYS All rights reserved D25 D º º IXTA 3N120 IXTP 3N120 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I Value vs. ...

Page 4

... Fig. 11. Capacitance 1 0000 000 C oss rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5.5 6 6.5 º 0.7 0.8 0.9 iss 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...

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