IXTA3N120 IXYS, IXTA3N120 Datasheet - Page 2

• Manufacturer Part Number: IXTA3N120
• Description: MOSFET N-CH 1.2KV 3A TO-263
• Manufacturer: IXYS

Specifications of IXTA3N120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.6 s
• Drain-source Breakdown Voltage: 1100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 3
• Rds(on), Max, Tj=25°c, (?): 4.5
• Ciss, Typ, (pf): 1050
• Qg, Typ, (nc): 39
• Trr, Typ, (ns): 700
• Pd, (w): 200
• Rthjc, Max, (k/w): 0.62
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2023873

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
d(on)
d(off)
f
S
SM
r
rr
fs
thJC
thCK
SD
iss
oss
rss
g(on)
gd
gs
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
I
F
F
DS
GS
= I
= I
S
S
= 0 V
= 20 V; I
V
V
R
V
(TO-220)
, V
, -di/dt = 100 A/µs, V
GS
GS
GS
G
= 4.7 Ω (External),
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, Note 1
R
= 100 V
(T
(T
DSS
DSS
J
J
= 25°C, unless otherwise specified)
, I
, I
= 25°C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
D
D
JM
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
1.5
Characteristic Values
Characteristic Values
1100 1350
0.25
typ.
typ.
700
110 135
2.6
40
17
15
32
18
42
21
8
0.62
max.
max.
60
1.5
12
3
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
Pins: 1 - Gate
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
3 - Source
14.61
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
IXTA 3N120
IXTP 3N120
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
2 - Drain
4 - Drain
Bottom Side
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
1. Gate
2. Drain
3. Source
4. Drain
Inches
0
Bottom Side
6,534,343
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029