STW11NK90Z STMicroelectronics, STW11NK90Z Datasheet

MOSFET N-CH 900V 9.2A TO-247

STW11NK90Z

Manufacturer Part Number
STW11NK90Z
Description
MOSFET N-CH 900V 9.2A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STW11NK90Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
980 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
115nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.98 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.2 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6198-5

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Manufacturer
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General features
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
Applications
July 2006
Order codes
STW11NK90Z
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeability
Switching application
Type
STW11NK90Z
Part number
V
900V
DSS
R
<0.98Ω
DS(on)
Zener-protected SuperMESH™ Power MOSFET
W11NK90Z
9.2A
Marking
I
D
N-channel 900V - 0.82Ω - 9.2A - TO-247
200W
Pw
Rev 2
Internal schematic diagram
Package
TO-247
TO-247
STW11NK90Z
Packaging
Tube
www.st.com
1/12
12

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STW11NK90Z Summary of contents

Page 1

... Power MOSFETs including revolutionary MDmesh™ products Applications ■ Switching application Order codes Part number STW11NK90Z July 2006 N-channel 900V - 0.82Ω - 9.2A - TO-247 9.2A 200W Internal schematic diagram Marking Package W11NK90Z TO-247 Rev 2 STW11NK90Z TO-247 Packaging Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STW11NK90Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ...

Page 3

... STW11NK90Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor V Gate source ESD(HBM-C=100pF, R=1.5KΩ) ESD(G-D) (2) dv/dt Peak diode recovery voltage slope ...

Page 4

... GS Parameter Test conditions V =15V =25V, f=1 MHz = =720V =10V GS (see Figure 14) DSS Parameter Test conditions V =450 =4.7Ω (see Figure 13) STW11NK90Z Min. Typ 900 GS = 100µ 4.6A 0.82 D Min. Typ. = 4.6A 11 3000 =0 240 GS 48 =0V to 720V oss Min. Typ. ...

Page 5

... STW11NK90Z Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM t Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µ ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Normalized B VDSS 6/12 Figure 2. Figure 4. vs temperature Figure 6. STW11NK90Z Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STW11NK90Z Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Maximum avalanche energy vs temperature 7/12 ...

Page 8

... Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching time waveform STW11NK90Z ...

Page 9

... STW11NK90Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STW11NK90Z inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 0.620 ...

Page 11

... STW11NK90Z 5 Revision history Table 9. Revision history Date 30-Mar-2006 25-Jul-2006 Revision 1 First release 2 Modified value on Avalanche data Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW11NK90Z ...

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