STW11NK90Z STMicroelectronics, STW11NK90Z Datasheet - Page 8
![MOSFET N-CH 900V 9.2A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STW11NK90Z
Manufacturer Part Number
STW11NK90Z
Description
MOSFET N-CH 900V 9.2A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STW11NK90Z.pdf
(12 pages)
Specifications of STW11NK90Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
980 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
115nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.98 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.2 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6198-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW11NK90Z
Manufacturer:
MAGNACHIP
Quantity:
4 300
Company:
Part Number:
STW11NK90Z
Manufacturer:
ST
Quantity:
4 250
Part Number:
STW11NK90Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STW11NK90Z,STW21NM50N,STW12NK80Z,W11NK90Z,
Manufacturer:
ST
0
Test circuits
3
8/12
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 14. Gate charge test circuit
Figure 16. Unclamped Inductive load test
Figure 18. Switching time waveform
circuit
STW11NK90Z