IXTC180N10T IXYS, IXTC180N10T Datasheet
IXTC180N10T
Specifications of IXTC180N10T
Related parts for IXTC180N10T
IXTC180N10T Summary of contents
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... IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on) and an optimized intrinsic reverse diode. This new platform of Power MOSFETs is a part of IXYS growing product line aimed at low voltage power conversion applications. TrenchMV Power MOSFETS find use in many applications ...
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... TrenchMV™ Power MOSFETs in 5-lead ISOPLUS i5-Paks™ The principal feature of this subset of TrenchMV Power MOSFETs arises from the high power handling and integration capabilities found in the IXYS discrete ISOPLUS i5-Pak. Standard discrete through-hole packages (i.e. TO-247 or TO-264) are only capable of housing one die due to their inherent spatial, thermal, and structural limitations ...
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Part Number (cont) DS(on) Max DSS Max T =25°C c (V) (A) IXTP64N055T 55 64 IXTY64N055T 55 64 IXTA90N055T 55 90 IXTP90N055T 55 90 IXTA110N055T 55 110 IXTA110N055T7 55 110 IXTC110N055T 55 78 IXTP110N055T 55 110 ...
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... IXTA160N10T7 100 160 IXTC160N10T 100 83 IXTH160N10T 100 160 IXTP160N10T 100 160 IXTQ160N10T 100 160 IXTA180N10T 100 180 IXTA180N10T7 100 180 IXTC180N10T 100 90 IXTH180N10T 100 180 IXTP180N10T 100 180 IXTQ180N10T 100 180 IXTC200N10T 100 101 IXTF200N10T 100 120 IXTH200N10T 100 200 IXTN200N10T ...