IXTC180N10T IXYS, IXTC180N10T Datasheet - Page 2

• Manufacturer Part Number: IXTC180N10T
• Description: MOSFET N-CH 100V 90A ISOPLUS220
• Manufacturer: IXYS

Specifications of IXTC180N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 90 A
• Power Dissipation: 150 W
• Mounting Style: SMD/SMT
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 6900
• Qg, Typ, (nc): 151
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 1.00
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Details

TrenchMV™ Power MOSFETs in 5-lead ISOPLUS i4-Paks™
TrenchMV™ Power MOSFETs in 5-lead ISOPLUS i5-Paks™
The ISOPLUS™ Advantage
The principal feature of this subset of TrenchMV Power MOSFETs arises from the high power handling capability and special lead configuration found in the
IXYS discrete ISOPLUS i4-Pak. Silicon current handling has outpaced the ability of most traditional discrete packaging, which typically limits steady state
current to 75A. The powerful ISOPLUS i4-Pak is used to full effect in this instance by combining its superior isolation, thermal and power cycling capabilities
and flexible configuration. In this case, the ISOPLUS i4-Pak is configured with 5 heavy-gage leads to provide a high current drain and source paired lead set
with joined copper webs and backside heat sinking, all of which conservatively improve the lead current rating to 150A.
The principal feature of this subset of TrenchMV Power MOSFETs arises from the high power handling and integration capabilities found in the IXYS
discrete ISOPLUS i5-Pak. Standard discrete through-hole packages (i.e. TO-247 or TO-264) are only capable of housing one die due to their inherent
spatial, thermal, and structural limitations. The powerful ISOPLUS i5-Pak is used to full effect in this instance by combining its superior isolation, thermal
and power cycling capabilities and flexible configuration. In this case, the flexible DCB substrate of the ISOPLUS i5-Pak is patterned to accommodate two
common-gate high current TrenchMV dice, allowing users to harness up to 280A out of the device with two parellel-connected die. The use of two parellel
die provides for lower on-state loses due to improved thermal distribution.
All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside
case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.
Additionally, the ceramic alumina substrates used also dramatically enhance device reliability by greatly improving thermal and power cycling. The DCB can
be patterned like a printed circuit board, which enables the unique integration capabilities of IXYS ISOPLUS packages. Kunze high performance phase
change materials can be used to further enhance ISOPLUS package thermal performance.
• Provides 2500V, UL recognized isolation with superior thermal
• Improves temperature and power cycling capability.
• Cost effective clip mounting.
* IXYS Patented Packages, Patent No. 6,404,065
performance (E153432).
Leads:
1. Gate
2, 3. Source
4, 5. Drain
6. Isolated
Leads:
1, 5. Drain
2, 4. Source
3. Gate
6. Isolated
All leads and tabs are tin plated
All leads and tabs are tin plated
Example Part +
Isolation Medium
IXTH220N055T with
SIL-PAD 2000™
IXTC220N055T
(ISOPLUS220™ with
Internal DCB Isolation)
– Denotes Inclusion
of Isolation Boundary.
R
0.6 C/W
TH(J-DCB)
0.42 C/W
R
TH(J-C)
R
TH(DCB-Case)
0.4 C/W
G
2.37 C/W
0.25 C/W
R
TH(C-S)
D
S
2.79 C/W
1.25 C/W
R
TH(J-S)