STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 3

• Manufacturer Part Number: STP11NM80
• Description: MOSFET N-CH 800V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 43.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1630pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4369-5

ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
Symbol
I
R
V
V
SDM
(BR)DSS
g
t
t
I
I
I
C
SD
I
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
DSS
GSS
R
I
2. Pulse width limited by safe operating area.
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
gs
gd
r
f
(1)
G
g
rr
rr
(1)
(2)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
CASE
I
V
V
V
V
V
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(Resistive Load see, Figure 4)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
V
D
D
SD
SD
SD
DS
DS
GS
DS
GS
DS
DD
DD
GS
DD
DD
G
DS
= 250 µA, V
= 7.5 A
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 11 A, V
= 11 A, di/dt = 100 A/µs
= 11 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= ± 30V
= V
= 10V, I
> I
= 400 V, I
= 640 V, I
= 10V
= 50 V, T
= 50 V, T
= 25 V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
V
x R
D
D
GS
GS
j
j
=5.5 A
D
D
GS
= 250 µA
= 25°C
= 150°C
DS(on)max,
= 10 V
= 5.5 A
= 11 A,
= 0
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
800
3
11.25
1630
Typ.
Typ.
Typ.
0.35
43.6
7.22
23.6
23.2
11.6
750
612
970
2.7
30
22
17
46
15
21
4
8
Max.
Max.
Max.
0.40
0.86
100
100
10
44
11
5
Unit
Unit
Unit
µC
µC
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
3/14