STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 7
![MOSFET N-CH 800V 11A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP11NM80
Manufacturer Part Number
STP11NM80
Description
MOSFET N-CH 800V 11A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STP11NM80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
43.6nC @ 10V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
11A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4369-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
12 000
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
20 000
Figure 18: Unclamped Inductive Load Test Cir-
cuit
Figure 19: Switching Times Test Circuit For
Resistive Load
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
Figure 21: Unclamped Inductive Wafeform
Figure 22: Gate Charge Test Circuit
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