STW11NK100Z STMicroelectronics, STW11NK100Z Datasheet - Page 8

• Manufacturer Part Number: STW11NK100Z
• Description: MOSFET N-CH 1KV 8.3A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW11NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.38 Ohm @ 4.15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 162nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3255-5

Electrical characteristics
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Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Figure 12. Normalized B
Capacitance variations
temperature
VDSS
vs temperature
STW11NK100Z