STP30NM30N STMicroelectronics, STP30NM30N Datasheet - Page 4

• Manufacturer Part Number: STP30NM30N
• Description: MOSFET N-CH 300V 30A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30NM30N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 0.075ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7521-5; STP30NM30N

Electrical characteristics
2
4/12
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
V
Symbol
Symbol
V
R
(BR)DSS
g
C
I
I
C
C
Q
GS(th)
Q
DS(on
GSS
DSS
fs
Q
R
oss
iss
rss
gs
gd
g
g
(1)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
V
V
(see Figure 13)
I
V
V
V
V
D
DS
DS
DD
GS
DS
DS
GS
DS
GS
= 1mA, V
= Max rating
= Max rating, T
= 15V, I
= 50V, f = 1 MHz, V
= 10V
= ± 20V
= V
= 10V, I
= 240V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
D
= 15A
= 15A
= 250µA
= 0
= 30A,
C
=125°C
GS
= 0
Min.
Min.
300
2
0.075
2500
Typ.
Typ.
500
1.7
70
75
15
40
3
9
STP30NM30N
0.090
Max.
Max.
100
100
1
4
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V
Ω
S
Ω