STP30NM30N STMicroelectronics, STP30NM30N Datasheet - Page 5

• Manufacturer Part Number: STP30NM30N
• Description: MOSFET N-CH 300V 30A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30NM30N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 0.075ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7521-5; STP30NM30N

STP30NM30N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
SD
RRM
I
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 12)
I
I
V
(see Figure 17)
SD
SD
DD
G
DD
= 4.7Ω, V
= 30A, V
= 30A, di/dt = 100A/µs
= 200V Tj = 25°C
= 150V, I
Test conditions
Test conditions
GS
D
GS
= 15A,
= 0
= 10V
Electrical characteristics
Min.
Min
Typ.
Typ.
350
30
25
25
65
25
5
Max Unit
Max Unit
120
1.3
30
µC
ns
ns
ns
ns
ns
A
A
V
A
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