IXFH36N50P IXYS, IXFH36N50P Datasheet

MOSFET N-CH 500V 36A TO-247

IXFH36N50P

Manufacturer Part Number
IXFH36N50P
Description
MOSFET N-CH 500V 36A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH36N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
93nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
36 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
540000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.17
Ciss, Typ, (pf)
5500
Qg, Typ, (nc)
93
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
540
Rthjc, Max, (ºc/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH36N50P
Manufacturer:
IXYS
Quantity:
15 500
Price:
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS220
S
TO-247
TO-268
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 4 mA
= 250µA
, V
G
= 0.5 I
= 3 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFH 36N50P
IXFT 36N50P
IXFV 36N50P
IXFV 36N50PS
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
500
500
540
150
300
260
1.5
36
90
36
50
10
6
5
2
±100
500
Max.
5.0
25
170 mΩ
V/ns
mJ
nA
µA
°C
°C
°C
°C
°C
µA
W
V
V
V
V
A
A
A
V
V
g
g
g
J
TO-247 AD (IXFH)
TO-268 (IXFT)
PLUS220SMD (IXFV...S)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
PLUS220 (IXFV)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G
DS(on)
DSS
D
G
S
G
≤ ≤ ≤ ≤ ≤ 170 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200 ms
= 500
=
S
S
D = Drain
TAB = Drain
36
DS99364E(03/06)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
A
V

Related parts for IXFH36N50P

IXFH36N50P Summary of contents

Page 1

... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 1.5 ≤ DSS 540 -55 ...

Page 2

... Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. 0.8 8.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS TO-247 (IXFH) Outline Max Terminals Gate Source Dim. Millimeter ns Min. Max. ...

Page 3

... C 3.1 2.8 2.5 2.2 1.9 5.5V 1.6 1.3 5V 4.5V 0.7 0 125º 25º IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS Fig. 2. Exte nde d Output Characte r is tics º 10V olts D S Fig Norm alize DS( alue vs . Junction ratur 10V 36A -50 -25 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 6 25º 0.9 1 1.1 1.2 100 oss IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS Fig. 8. Trans conductance T = -40ºC J 25ºC 125º mperes D Fig. 10. Gate Char 250V 18A 10m nanoCoulombs G Fig. 12. Forw ar d-Bias ...

Page 5

... PLUS220 (IXFV) Outline © 2006 IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.01 Pulse Width - Seconds IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS 0.1 1 IXYS REF: F_36N50P (7J) 03-29-06-D.xls 10 ...

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