IXFH36N50P IXYS, IXFH36N50P Datasheet - Page 5

• Manufacturer Part Number: IXFH36N50P
• Description: MOSFET N-CH 500V 36A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH36N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 36 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 540000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 5500
• Qg, Typ, (nc): 93
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 540
• Rthjc, Max, (ºc/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFH36N50P IXFT 36N50P
IXFV 36N50P IXFV 36N50PS
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
PLUS220 (IXFV) Outline
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IXYS REF: F_36N50P (7J) 03-29-06-D.xls