STW3N150 STMicroelectronics, STW3N150 Datasheet - Page 5

• Manufacturer Part Number: STW3N150
• Description: MOSFET N-CH 1500V 2.5A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW3N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 29.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 939pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 140000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 6ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6332-5

STFW3N150, STP3N150, STW3N150
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 13102 Rev 9
V
R
(see Figure 18)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 2.5 A, V
= 2.5 A, di/dt = 100 A/µs
= 2.5 A, di/dt = 100 A/µs
= 60 V
= 60 V, Tj = 150 °C
= 750 V, I
Test conditions
Test conditions
GS
GS
D
= 1.25 A,
= 10 V
= 0
Electrical characteristics
Min.
Min. Typ. Max. Unit
-
-
-
-
-
Typ.
11.7
12.3
410
540
2.4
3.3
24
47
45
61
Max. Unit
2.5
1.6
10
-
µC
µC
ns
ns
A
A
V
A
A
ns
ns
ns
ns
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