IXFH21N50 IXYS, IXFH21N50 Datasheet - Page 3
![MOSFET N-CH 500V 21A TO-247AD](/photos/5/30/53063/to-247ad_sml.jpg)
IXFH21N50
Manufacturer Part Number
IXFH21N50
Description
MOSFET N-CH 500V 21A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH21N50.pdf
(4 pages)
Specifications of IXFH21N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
21
Rds(on), Max, Tj=25°c, (?)
0.25
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
135
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXFH21N50Q
Manufacturer:
IXYS
Quantity:
15 500
© 1999 IXYS All rights reserved
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
50
45
40
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
-50
0
0
T
T
26N50
24N50
21N50
J
5
J
-25
= 25°C
= 25°C
Fig. 1 Output Characteristics
5
Fig. 3 R
Fig. 5 Drain Current vs.
Case Temperature
10 15 20 25 30 35 40 45 50
V
0
GS
10
= 10V
T
DS(on)
25
I
C
7V
D
V
- Degrees C
15
V
- Amperes
DS
GS
vs. Drain Current
50
- Volts
= 10V
20
75
V
GS
= 15V
25
100 125 150
6V
30
5V
35
IXFH21N50
IXFM21N50
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
45
40
35
30
25
20
15
10
5
0
-50
-50
0
1
-25
-25
T
V
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
J
V
DS
of Drain to Source Resistance
= 25°C
GS(th)
= 10V
2
0
0
IXFM24N50
IXFH24N50
IXFT24N50
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
= 12A
- Volts
50
50
5
6
75
75
7
100 125 150
100 125 150
BV
8
DSS
IXFM26N50
IXFH26N50
IXFT26N50
9
10