IXFH21N50 IXYS, IXFH21N50 Datasheet - Page 4

• Manufacturer Part Number: IXFH21N50
• Description: MOSFET N-CH 500V 21A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH21N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Forward Transconductance Gfs (max / Min): 21 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 21
• Rds(on), Max, Tj=25°c, (?): 0.25
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 135
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
D=0.05
D=0.02
D=0.01
D=0.5
D=0.2
D=0.1
Single pulse
25
V
I
I
D
G
DS
5
= 12.5A
= 10mA
Gate Charge - nCoulombs
= 250V
50
75
0.0001
10
V
f = 1 Mhz
V
DS
DS
100 125 150 175 200
- Volts
= 25V
15
20
0.001
C
C
C
iss
oss
rss
25
IXFH21N50
IXFM21N50
Time - Seconds
0.01
4,835,592
4,850,072
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source to Drain Voltage
100
0.1
10
50
45
40
35
30
25
20
15
10
1
5
0
4,881,106
4,931,844
0.00
1
Limited by R
0.1
0.25
IXFM24N50
IXFH24N50
IXFT24N50
5,017,508
5,034,796
T
DS(on)
J
0.50
= 125°C
10
V
V
DS
SD
5,049,961
5,063,307
0.75
- Volts
- Volt
1
T
J
= 25°C
1.00
5,187,117
5,237,481
100
IXFM26N50
IXFH26N50
IXFT26N50
1.25
5,486,715
5,381,025
1.50
500
10
10µs
100µs
1ms
10ms
100ms