IXTH10P60 IXYS, IXTH10P60 Datasheet - Page 2
![MOSFET P-CH 600V 10A TO-247AD](/photos/5/30/53063/to-247ad_sml.jpg)
IXTH10P60
Manufacturer Part Number
IXTH10P60
Description
MOSFET P-CH 600V 10A TO-247AD
Manufacturer
IXYS
Datasheet
1.IXTH10P60.pdf
(4 pages)
Specifications of IXTH10P60
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1 Ohms
Forward Transconductance Gfs (max / Min)
9 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 10 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-600
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
1
Ciss, Typ, (pf)
4700
Qg, Typ, (nc)
160
Trr, Typ, (ns)
500
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1152201
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH10P60
Manufacturer:
IXYS
Quantity:
35 500
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
V
V
Resistive Switching Times
V
R
V
TO-247
V
Repetitive, Pulse Width Limited by T
I
I
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
G
= I
= I
= -10V, I
= 0V, V
= -10V, V
= 4.7Ω (External)
= -10V, V
= 0V
S
S
, V
, -di/dt = -100A/μs
GS
= 0V, Note 1
DS
D
DS
DS
= - 25V, f = 1MHz
= 0.5 • I
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
5
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
4700
0.21
Typ.
430
135
160
500
Typ.
33
27
85
35
46
92
9
Max.
0.42 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
- 40
-10
- 3
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
IXTH10P60
IXTT10P60
.8
e
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216