IXTH10P60 IXYS, IXTH10P60 Datasheet - Page 4

• Manufacturer Part Number: IXTH10P60
• Description: MOSFET P-CH 600V 10A TO-247AD
• Manufacturer: IXYS

Specifications of IXTH10P60

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Forward Transconductance Gfs (max / Min): 9 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -600
• Id(cont), Tc=25°c, (a): -10
• Rds(on), Max, Tj=25°c, (?): 1
• Ciss, Typ, (pf): 4700
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 500
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1152201

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Source Current vs Source-to-Drain Voltage
0.001
0.01
-10
0.1
Fig. 9. Gate Charge Characteristic Curve
-8
-6
-4
-2
0
20
15
10
1
10
5
0
0
0.0
-5
D=0.2
D=0.02
V
I
I
D=0.1
D=0.01
D=0.5
D=0.05
D
G
DS
= -5A
= -1m A
0.5
25
= -300V
Q
T
J
g
= 125
1.0
- nanocoulombs
50
10
V
SD
-4
O
C
Single pulse
1.5
- Volts
75
Fig. 11. Maximum Thermal Impedance
2.0
T
100
J
10
= 25
2.5
-3
O
C
125
Pulse Width - Seconds
3.0
10
-2
10000
-
100.0
5000
3000
2000
1000
-
10.0
-
-
1.0
0.1
500
300
200
100
-
10
0
Fig. 10. Forward-Bias Safe Operating Area
T
T
Single Pulse
J
C
Fig. 8. Capacitance Curves
= 150ºC
= 25ºC
-5
R
10
DS(on)
-1
-10
Limit
-15
V
Ciss
Coss
Crss
D S
V
D = Duty Cycle
DS
-
-20
- Volts
100
- Volts
10
-25
0
-30
f = 1MHz
IXTH10P60
IXTT10P60
-35
100µs
1ms
10ms
100ms
DC
IXYS REF: T_10P60(7B)1-08-10
-40
-
1000
10
1