IXFK180N25T IXYS, IXFK180N25T Datasheet - Page 4

• Manufacturer Part Number: IXFK180N25T
• Description: MOSFET N-CH 180A 250V TO-264
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFK180N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 345nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1390W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0129
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 345
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 1390
• Rthjc, Max, (k/w): 0.09
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
350
300
250
200
150
100
100
50
80
60
40
20
0
0
0.0
3.4
0
3.8
5
0.2
f
Fig. 9. Forward Voltage Drop of
= 1 MHz
4.2
10
Fig. 7. Input Admittance
0.4
Fig. 11. Capacitance
Intrinsic Diode
T
4.6
15
J
V
V
= 125ºC
SD
DS
0.6
V
T
GS
J
- Volts
- Volts
= 125ºC
5.0
20
- Volts
- 40ºC
25ºC
0.8
5.4
25
T
C iss
C oss
C rss
J
1.0
= 25ºC
5.8
30
1.2
6.2
35
6.6
1.4
40
1,000
280
240
200
160
120
100
80
40
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
R
J
C
V
I
I
20
DS(
D
G
= 150ºC
DS
= 25ºC
= 90A
= 10mA
50
on
= 125V
)
40
Limit
Fig. 8. Transconductance
100
60
Fig. 10. Gate Charge
10
Q
I
D
G
80
- Amperes
150
- NanoCoulombs
V
DS
100
- Volts
T
200
J
120
= - 40ºC
IXFK180N25T
IXFX180N25T
100
25ºC
125ºC
140
1ms
250
160
IXYS REF: F_180N25T(9E)3-23-09
25µs
100µs
300
180
1000
200
350