IXFK180N25T IXYS, IXFK180N25T Datasheet - Page 5

• Manufacturer Part Number: IXFK180N25T
• Description: MOSFET N-CH 180A 250V TO-264
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFK180N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 345nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1390W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0129
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 345
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 1390
• Rthjc, Max, (k/w): 0.09
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFK180N25T
IXFX180N25T
Fig. 13. Maximum Transient Thermal Impedance
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All rights reserved
IXYS REF: F_180N25T(9E)3-23-09