IXFH12N100 IXYS, IXFH12N100 Datasheet - Page 4

• Manufacturer Part Number: IXFH12N100
• Description: MOSFET N-CH 1KV 12A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH12N100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.05
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 122
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
Fig.7 Gate Charge Characteristic Curve
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Fig.8 Capacitance Curves
Single Pulse
Fig.10 Transient Thermal Impedance
V
I
I
D
G
DS
= 6A
= 10mA
25
= 500V
5
Gate Charge - nCoulombs
C
C
C
50
iss
oss
rss
0.0001
V
10
DS
f = 1MHz
V
DS
75
- Volts
= 25V
15
100
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
125
0.001
20
150
Time - Seconds
0.01
0.1
10
20
18
16
14
12
10
1
8
6
4
2
0
0.0
1
Fig.8 Forward Bias Safe Operating Area
Limited by R
Fig.9 Source Current vs. Source
0.2
IXFH 10N100
IXFM 10N100
0.1
T
to Drain Voltage
J
0.4
= 125°C
DS(on)
10
0.6
V
V
SD
DS
- Volts
- Volts
0.8
T
J
1
100
= 25°C
1.0
IXFH 12N100
IXFM 12N100
6,534,343
1.2
1000
1.4
6,583,505
10
10µs
100µs
1ms
10ms
100ms