STW55NM60ND STMicroelectronics, STW55NM60ND Datasheet

MOSFET N-CH 600V 51A TO-247

STW55NM60ND

Manufacturer Part Number
STW55NM60ND
Description
MOSFET N-CH 600V 51A TO-247
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STW55NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 25.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 50V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N Channel
Continuous Drain Current Id
51A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.047ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
51 A
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7036-5

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STW55NM60ND
Manufacturer:
ST
Quantity:
12 000
Part Number:
STW55NM60ND
Manufacturer:
ST
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Part Number:
STW55NM60ND
Manufacturer:
ST
Quantity:
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Part Number:
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Manufacturer:
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Features
Application
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1.
April 2008
STW55NM60ND
The worldwide best R
recovery diode devices in TO-247
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
Switching applications
STW55NM60ND
Type
Order code
Device summary
(@T
650 V
V
DSS
J
DS(on)
max)
amongst the fast
< 0.060 Ω
FDmesh™ II Power MOSFET (with fast diode)
R
55NM60ND
(max)
DS(on)
Marking
N-channel 600 V - 0.047 Ω - 51 A TO-247
51 A
I
D
Rev 2
Figure 1.
Package
TO-247
Internal schematic diagram
STW55NM60ND
TO-247
1
Packaging
2
3
Tube
www.st.com
1/12
12

Related parts for STW55NM60ND

STW55NM60ND Summary of contents

Page 1

... Device summary Order code STW55NM60ND April 2008 N-channel 600 V - 0.047 Ω TO-247 FDmesh™ II Power MOSFET (with fast diode) R DS(on (max) < 0.060 Ω amongst the fast Figure 1. Marking Package 55NM60ND Rev 2 STW55NM60ND TO-247 Internal schematic diagram Packaging TO-247 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STW55NM60ND ...

Page 3

... STW55NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT (2) dv/dt Peak diode recovery voltage slope T Storage temperature stg T Max. operating junction temperature j 1 ...

Page 4

... GS Parameter Test conditions MHz 300 4.7 Ω (see Figure 19), (see Figure 14 480 (see Figure 15) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV Open drain DSS STW55NM60ND Min. Typ 600 250 µ 25.5 A 0.047 D Min. Typ 25 5800 300 480 V 900 = 25 188 190 ...

Page 5

... STW55NM60ND Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µ ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STW55NM60ND ...

Page 7

... STW55NM60ND Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B VDSS vs temperature 7/12 ...

Page 8

... Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive load test circuit Figure 19. Switching time waveform STW55NM60ND ...

Page 9

... STW55NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... Package mechanical data Dim øP øR S 10/12 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 STW55NM60ND Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 11

... STW55NM60ND 5 Revision history Table 8. Document revision history Date 16-Nov-2007 22-Apr-2008 Revision 1 First release. 2 Document status promoted from preliminary data to datasheet. Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW55NM60ND ...

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