STW55NM60ND STMicroelectronics, STW55NM60ND Datasheet - Page 6

• Manufacturer Part Number: STW55NM60ND
• Description: MOSFET N-CH 600V 51A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW55NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 50V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.047ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 51 A
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7036-5

Electrical characteristics
2.1
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Figure 2.
Figure 4.
Figure 6.
Safe operating area
Output characteristics
Transconductance
Electrical characteristics (curves)
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
STW55NM60ND