IXFX64N60P IXYS, IXFX64N60P Datasheet - Page 2

• Manufacturer Part Number: IXFX64N60P
• Description: MOSFET N-CH 600V 64A PLUS247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFX64N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 96 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 1040W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.096 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 63 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 64 A
• Power Dissipation: 1040000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.096
• Ciss, Typ, (pf): 12000
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
V
F
F
GS
R
DS
GS
GS
G
GS
= I
= 25A, -di/dt = 100 A/µs
= 100V
= 0 V
= 20 V; I
= 10 V, V
= 1 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V, Note 1
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
4,850,072
4,881,106
= 0.5 V
= 0.5 V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
(T
(T
= 0.5 I
=0.5 I
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
40
Characteristic Values
Characteristic Values
1150
Typ. Max.
Typ. Max.
0.15
200
0.6
6.0
6,162,665
6,259,123 B1
6,306,728 B1
79
63
12
80
28
23
24
70
68
0.12 ° C/W
150
200
1.5
64
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
TO-264 Outline
PLUS 247
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
25.91
19.81
20.32
20.80
15.75
19.81
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Millimeter
5.46 BSC
TM
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
6,727,585
6,759,692
6,771,478 B2
Outline
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
IXFK 64N60P
IXFX 64N60P
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190