IXFX64N60P IXYS, IXFX64N60P Datasheet - Page 4

• Manufacturer Part Number: IXFX64N60P
• Description: MOSFET N-CH 600V 64A PLUS247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFX64N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 96 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 1040W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.096 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 63 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 64 A
• Power Dissipation: 1040000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.096
• Ciss, Typ, (pf): 12000
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
100
140
120
100
1,000
90
80
70
60
50
40
30
20
10
80
60
40
20
100
0
0
10
3.5
0.3
0
0.4
f = 1 MHz
4
Fig. 9. Forward Voltage Drop of
5
0.5
10
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
0.6
T
Intrinsic Diode
J
T
= 125ºC
V
J
V
15
V
GS
= 125ºC
SD
- 40ºC
DS
5
0.7
25ºC
- Volts
- Volts
- Volts
20
0.8
5.5
25
T
0.9
J
= 25ºC
C iss
C oss
C rss
6
30
1
6.5
35
1.1
1.2
40
7
1,000
100
130
120
110
100
10
10
90
80
70
60
50
40
30
20
10
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
R
T
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
DS(on)
J
D
G
DS
20
10
= - 40ºC
= 32A
= 10mA
125ºC
= 300V
25ºC
Limit
40
20
Fig. 8. Transconductance
30
60
Q
Fig. 10. Gate Charge
G
- NanoCoulombs
I
D
V
80
40
- Amperes
DS
- Volts
100
100
50
DC
120
60
IXFK 64N60P
IXFX 64N60P
140
70
160
80
T
T
J
C
= 150ºC
= 25ºC
180
90
25µs
100µ
1ms
10ms
1000
200
100