IXFX180N10 IXYS, IXFX180N10 Datasheet - Page 4

MOSFET N-CH 100V 180A PLUS247

IXFX180N10

Manufacturer Part Number
IXFX180N10
Description
MOSFET N-CH 100V 180A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheets

Specifications of IXFX180N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
390nC @ 10V
Input Capacitance (ciss) @ Vds
10900pF @ 25V
Power - Max
560W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
90 s
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
180 A
Power Dissipation
560000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.008
Ciss, Typ, (pf)
10900
Qg, Typ, (nc)
390
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
560
Rthjc, Max, (ºc/w)
0.22
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX180N10
Manufacturer:
IXYS
Quantity:
1 500
Part Number:
IXFX180N10
Manufacturer:
IXYS
Quantity:
6 285
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
350
300
250
200
150
100
100
300
275
250
225
200
175
150
125
100
50
10
75
50
25
0
1
0
0.4
3.5
0
0.5
4.0
f
5
= 1 MHz
Fig. 9. Forward Voltage Drop of
0.6
4.5
10
Fig. 7. Input Admittance
0.7
Fig. 11. Capacitance
T
5.0
Intrinsic Diode
J
= 125ºC
15
V
V
0.8
V
SD
DS
GS
5.5
- Volts
- Volts
- Volts
0.9
20
6.0
T
J
1.0
= - 40ºC
T
25
J
125ºC
= 25ºC
25ºC
6.5
C iss
C oss
C rss
1.1
30
7.0
1.2
35
7.5
1.3
1.4
8.0
40
1.000
0.100
0.010
0.001
140
130
120
110
100
10
90
80
70
60
50
40
30
20
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
= 90A
= 10mA
50
Fig. 12. Maximum Transient Thermal
= 50V
50
0.001
100
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
100
Pulse Width - Seconds
G
150
- NanoCoulombs
I
0.01
D
Impedance
- Amperes
200
150
0.1
250
T
J
200
= - 40ºC
IXFX180N10
IXFK180N10
25ºC
125ºC
300
1
250
350
400
300
10

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