IXFX180N10 IXYS, IXFX180N10 Datasheet - Page 5

• Manufacturer Part Number: IXFX180N10
• Description: MOSFET N-CH 100V 180A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX180N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 390nC @ 10V
• Input Capacitance (ciss) @ Vds: 10900pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 90 s
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 560000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.008
• Ciss, Typ, (pf): 10900
• Qg, Typ, (nc): 390
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 560
• Rthjc, Max, (ºc/w): 0.22
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
1,000
100
10
1
1
Fig. 13. Forward-Bias Safe Operating Area
External Lead Limit
T
T
Single Pulse
J
C
R
= 150ºC
= 25ºC
DS(on)
Limit
V
@ T
DS
- Volts
C
10
= 25ºC
100
25µs
100µs
1ms
10ms
100ms
DC
1,000
100
10
1
1
Fig. 14. Forward-Bias Safe Operating Area
T
T
Single Pulse
J
C
= 150ºC
R
= 75ºC
DS(on)
Limit
@ T
V
DS
- Volts
C
10
= 75ºC
IXFX180N10
IXFK180N10
IXYS REF: F_180N10(9X)2-24-09-B
100
25µs
100µs
1ms
10ms
100ms
DC