BSH202,215 NXP Semiconductors, BSH202,215 Datasheet - Page 3

• Manufacturer Part Number: BSH202,215
• Description: MOSFET P-CH 30V 520MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH202,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 280mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 520mA
• Vgs(th) (max) @ Id: 1.9V @ 1mA
• Gate Charge (qg) @ Vgs: 2.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 80pF @ 24V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.52 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054718215; BSH202 T/R; BSH202 T/R

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
ID% = 100 I
120
100
120
100
0.001
80
60
40
20
80
60
40
20
0.01
I
0
0
0.1
Fig.2. Normalised continuous drain current.
10
D
1
0
0
& I
0.1
Normalised Power Dissipation, PD (%)
Normalised Drain Current, ID (%)
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
Fig.1. Normalised power dissipation.
DM
RDS(on) = VDS/ ID
= f(V
25
25
PD% = 100 P
D
/I
D 25 ˚C
DS
Ambient Temperature, Ta (C)
Ambient Temperature, Ta (C)
Drain-Source Voltage, VDS (V)
); I
50
50
= f(T
1
DM
single pulse; parameter t
a
D
); conditions: V
75
75
/P
D 25 ˚C
d.c.
100
100
= f(T
10
a
= 25 ˚C
a
)
tp = 10us
125
125
GS
100 ms
100 us
1 ms
10 ms
BSH202
-10 V
150
150
100
p
3
1000
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig.5. Typical output characteristics, T
100
0.1
-1
3
2
1
0
Fig.6. Typical on-state resistance, T
10
0
1
1E-06
0
Drain-Source On Resistance, RDS(on) (Ohms)
0
Drain current, ID (A)
Peak Pulsed Drain Current, IDM (A)
Tj = 25 C
D = 0.5
0.1
0.02
single pulse
Fig.4. Transient thermal impedance.
-2.5 V
-0.2
0.05
1E-05
0.2
VGS = -10 V
Z
R
th j-a
I
DS(ON)
D
-2.7 V
-0.5
= f(V
Drain-Source Voltage, VDS (V)
-0.4
Drain Current, ID (A)
1E-04
= f(t); parameter D = t
-2.9 V
= f(I
DS
Pulse width, tp (s)
-0.6
1E-03
); parameter V
D
); parameter V
-3.1 V
-1
-4.5 V
-0.8
1E-02
-3.3 V
P
Product specification
D
1E-01
-1
-3.5 V
-1.5
GS
tp
VGS = -10 V
p
GS
T
/T
Tj = 25 C
-1.2
j
1E+00 1E+01
D = tp/T
= 25 ˚C .
j
BSH202
-4.5 V
BSH202
-2.5 V
= 25 ˚C .
-3.5 V
-2.7 V
BSH202
-2.9 V
-3.1 V
-3.3 V
Rev 1.000
-1.4
-2