BSH202,215 NXP Semiconductors, BSH202,215 Datasheet - Page 5
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BSH202,215
Manufacturer Part Number
BSH202,215
Description
MOSFET P-CH 30V 520MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSH202215.pdf
(7 pages)
Specifications of BSH202,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
900 mOhm @ 280mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
520mA
Vgs(th) (max) @ Id
1.9V @ 1mA
Gate Charge (qg) @ Vgs
2.9nC @ 10V
Input Capacitance (ciss) @ Vds
80pF @ 24V
Power - Max
417mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.9 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.52 A
Power Dissipation
417 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934054718215
BSH202 T/R
BSH202 T/R
BSH202 T/R
BSH202 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH202,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-14
-12
-10
-8
-6
-4
-2
0
0
Gate-source voltage, VGS (V)
RD = 50 Ohms
VDD = 15 V
Tj = 25 C
1
Gate charge, (nC)
V
GS
= f(Q
2
G
)
3
BSH202
4
5
3.5
2.5
1.5
0.5
I
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
150 C
1
GS
Tj = 25 C
= 0 V; parameter T
Product specification
1.5
BSH202
BSH202
Rev 1.000
2
j