BSP250,115 NXP Semiconductors, BSP250,115 Datasheet

MOSFET P-CH 30V 3A SOT223

BSP250,115

Manufacturer Part Number
BSP250,115
Description
MOSFET P-CH 30V 3A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BSP250135.pdf (12 pages)

Specifications of BSP250,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1.65W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
25nC @ 10V
Vgs(th) (max) @ Id
2.8V @ 1mA
Current - Continuous Drain (id) @ 25° C
3A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1A, 10V
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Gate Charge Qg
10 nC
Forward Transconductance Gfs (max / Min)
2 S, 1 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
1650 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934033450115::BSP250 T/R::BSP250 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSP250,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC13b
DATA SHEET
BSP250
P-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
1997 Jun 20

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BSP250,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 ...

Page 2

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor FEATURES High-speed switching No secondary breakdown Very low on-resistance. APPLICATIONS Low-loss motor and actuator drivers Power switching. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. CAUTION The ...

Page 3

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage (DC gate-source voltage (DC) GSO I drain current (DC peak drain ...

Page 4

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Note 1. Device mounted on an epoxy printed-circuit board, 40 ...

Page 5

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 600 handbook, halfpage C (pF) 400 200 Fig.4 Capacitance as a function of drain source voltage; typical values. 16 handbook, ...

Page 6

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 6 handbook, halfpage I S (A) 4 ( 150 (3) T ...

Page 7

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 10 handbook, full pagewidth = 0. j-s 0.5 (K/W) 0.33 0.2 0.1 1 0.05 0.02 0. Fig.12 Transient thermal resistance from junction to ...

Page 8

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT ...

Page 9

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product ...

Page 10

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 NOTES 10 Product specification BSP250 ...

Page 11

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 NOTES 11 Product specification BSP250 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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