BSP250 NXP Semiconductors, BSP250 Datasheet
BSP250
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... DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 ...
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... DSon P total power dissipation tot 1997 Jun 20 PINNING - SOT223 PIN SYMBOL handbook, halfpage Top view MAM121 Fig.1 Simplified outline and symbol. CONDITIONS MIN 1. open drain mA 100 Product specification BSP250 DESCRIPTION gate drain source drain MAX. UNIT ...
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... C s note 1 40 1.5 mm; mounting pad for drain lead minimum 6 cm MLB885 10 handbook, halfpage 150 200 T amb ( C) = 0.01. Soldering point temperature T (1) R DSon 3 Product specification MIN. MAX 1.65 65 +150 150 1 ( (V) = 100 C. s limitation. Fig.3 SOAR. BSP250 UNIT MLB835 ...
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... 2 1. 1.25 A; di/dt = 100 CONDITIONS VALUE note 1.5 mm; mounting pad for drain lead minimum 6 cm MIN. TYP 0 MHz 250 = MHz 140 = MHz 150 Product specification BSP250 UNIT K/W K MAX. UNIT V 2.8 V 100 nA 100 0.4 0. 140 ns 1.6 V 200 ns ...
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... Fig.6 Transfer characteristic, typical values. 1997 Jun 20 MBE144 handbook, halfpage (A) C iss C oss C rss ( MBE150 handbook, halfpage Fig.7 5 Product specification Fig.5 Output characteristics; typical values Gate-source voltage as a function of total gate charge. BSP250 MBE149 (V) DS MBE145 (nC) ...
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... V . GSth (2) I Fig.11 Temperature coefficient of drain-source (1) (2)(3) (4) ( DSon j = 0 0 Drain-source on-state resistance as a function of gate-source voltage; typical values. 1.8 k 1.6 1.4 1.2 1.0 0.8 0 DSon ---------------------------------------- - DSon at: DSon = 0 4 on-resistance. Product specification BSP250 MDA218 (V) MBE146 (1) (2) 100 150 ...
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... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 10 handbook, full pagewidth = 0. j-s 0.5 (K/W) 0.33 0.2 0.1 1 0.05 0.02 0. Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1997 Jun Product specification BSP250 MBE147 (s) 1 ...
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... OUTLINE VERSION IEC SOT223 1997 Jun scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC EIAJ 8 Product specification detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION BSP250 SOT223 ISSUE DATE 96-11-11 97-02-28 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 20 9 Product specification BSP250 ...
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... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 NOTES 10 Product specification BSP250 ...
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... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 NOTES 11 Product specification BSP250 ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...