BSP250 NXP Semiconductors, BSP250 Datasheet - Page 2

• Manufacturer Part Number: BSP250
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BSP250

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3A
• Power Dissipation: 1.65W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
QUICK REFERENCE DATA
1997 Jun 20
V
V
V
V
I
R
P
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
D
SYMBOL
High-speed switching
No secondary breakdown
Very low on-resistance.
Low-loss motor and actuator drivers
Power switching.
DS
SD
GSO
GSth
tot
DSon
P-channel enhancement mode
vertical D-MOS transistor
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CAUTION
PARAMETER
I
open drain
I
I
T
2
S
D
D
s
PINNING - SOT223
= 1.25 A
= 1 mA; V
= 1 A; V
= 100 C
handbook, halfpage
CONDITIONS
PIN
1
2
3
4
GS
Top view
Fig.1 Simplified outline and symbol.
DS
= 10 V
1
= V
GS
SYMBOL
2
g
d
s
d
4
1
3
MIN.
MAM121
gate
drain
source
drain
Product specification
g
0.25
5
30
1.6
20
2.8
3
DESCRIPTION
MAX.
BSP250
d
s
V
V
V
V
A
W
UNIT