BSP250 NXP Semiconductors, BSP250 Datasheet - Page 7
![Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology](/photos/31/42/314222/sot223_sml.jpg)
BSP250
Manufacturer Part Number
BSP250
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet
1.BSP250.pdf
(12 pages)
Specifications of BSP250
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3A
Power Dissipation
1.65W
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP250
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BSP250
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSP250,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BSP250115
Manufacturer:
NXP Semiconductors
Quantity:
109 000
Philips Semiconductors
1997 Jun 20
handbook, full pagewidth
P-channel enhancement mode
vertical D-MOS transistor
R th j-s
(K/W)
Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
10
10
1
10
1
6
0.75
0.33
0.05
0.02
0.01
0.5
0.2
0.1
=
10
0
5
10
4
10
7
3
10
2
10
P
1
t p
Product specification
T
t p (s)
=
MBE147
BSP250
t p
T
t
1