BSP250 NXP Semiconductors, BSP250 Datasheet - Page 5

• Manufacturer Part Number: BSP250
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BSP250

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3A
• Power Dissipation: 1.65W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
1997 Jun 20
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
V
T
Fig.4
V
T
j
j
GS
DS
= 25 C.
= 25 C.
(pF)
600
C
400
200
(A)
I D
= 10 V.
= 0.
Fig.6 Transfer characteristic, typical values.
16
12
0
8
4
0
0
0
Capacitance as a function of drain source
voltage; typical values.
2
10
4
20
C oss
C rss
C iss
6
V DS (V)
V GS (V)
MBE144
MBE150
30
8
5
handbook, halfpage
handbook, halfpage
T
V
I
Fig.7
D
j
DD
V GS
= 25 C.
= 3 A.
(V)
(A)
I D
= 15 V.
Fig.5 Output characteristics; typical values.
12
10
10
8
6
4
2
0
8
6
4
2
0
0
0
Gate-source voltage as a function of total
gate charge.
V GS =
10 V
2
2
4
7.5 V
4
6
6
8
Product specification
4.5 V
3.5 V
2.5 V
6 V
5 V
4 V
3 V
V
8
DS
10
Q g (nC)
BSP250
MBE149
(V)
MBE145
10
12