STN4NF03L STMicroelectronics, STN4NF03L Datasheet - Page 3

MOSFET N-CH 30V 6.5A SOT223

STN4NF03L

Manufacturer Part Number
STN4NF03L
Description
MOSFET N-CH 30V 6.5A SOT223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STN4NF03L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6.5 A
Power Dissipation
3.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4525-2

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STN4NF03L
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. Starting T
Table 3.
1. When mounted on 1 inch
2.
Symbol
Rthj-pcb
Rthj-pcb
Symbol
E
I
Minimum recommended footprint
P
DM
V
V
T
AS
T
I
I
TOT
GS
T
DS
stg
D
D
J
(1)
l
(2)
J
Absolute maximum ratings
Thermal data
= 25 °C, I
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Thermal resistance junction-PCB
Thermal resistance junction-PCB
Maximum lead temperature for soldering
purpose (for 10 sec. 1.6 mm from case) typ
D
= 6 A
2
FR-4 board, 2 oz. Cu., t < 10 s
Parameter
Parameter
C
= 25 °C
GS
= 0)
C
C
=100 °C
= 25 °C
(1)
(2)
max
max
-55 to 150
Value
Value
0.026
± 16
100
260
100
6.5
4.5
3.3
38
30
26
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
3/12

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