STN4NF03L STMicroelectronics, STN4NF03L Datasheet - Page 4

• Manufacturer Part Number: STN4NF03L
• Description: MOSFET N-CH 30V 6.5A SOT223
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STN4NF03L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 3.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4525-2

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
t
t
I
I
C
DS(on)
C
Q
Q
GS(th)
d(on)
d(off)
GSS
fs
DSS
Q
oss
t
rss
t
iss
gd
gs
r
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
rise time
Turn-off-delay time
fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
V
R
(see Figure 15)
V
R
(see Figure 15)
V
V
V
V
(see Figure 14)
I
V
V
V
V
V
V
D
GS
DD
DD
DS
DS
DD
G
G
GS
GS
GS
DS
DS
DS
= 250 µA, V
= 4.7 Ω, V
= 4.7 Ω, V
= 24 V, I
= 15 V, I
= 15 V, I
= 10 V
= 25 V, f=1 MHz, V
=10 V
= max rating,
= max rating @125 °C
= ±16 V
= V
= 10 V, I
= 5 V, I
Test conditions
Test conditions
Test conditions
GS
,
, I
I
D
D
D
D
D
D
D
= 2 A
= 2 A,
= 4 A
GS
GS
= 1 A
= 2 A,
= 250 µA
GS
= 2 A
= 4.5 V
= 4.5 V
= 0
GS
= 0
Min.
Min.
Min.
30
3
1
0.039
0.046
Typ.
Typ.
Typ.
100
330
6.5
3.2
11
35
22
90
40
6
2
STN4NF03L
±
Max.
0.05
0.06
Max.
Max.
10
100
1
9
Unit
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
Ω
S